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| MMBFJ309 / MMBFJ310 J-FET HIGH FREQUENCY AMPLIFIER TRANSISTOR N-CHANNEL For VHF/UHF Applications 3 G S 1 D 2 1 2 3 DEVICE MARKING MMBFJ309 = B9J; MMBFJ310 = B1J SOT-23 Note: Drain and Source are interchangeable. ELECTRICAL RATINGS Rating Drain to Source Voltage Gate to Source Voltage Gate Current Symbol V DS V GS IG Value 25 25 10 Units V V mAdc THERMAL RATINGS Rating Power Dissipation (Note 1) Thermal Resistance - Junction to Ambient (Note 1) Operating Temperature Range Storage Temperature Range Symbol Pd R JA TJ Tstg Value 225 556 -55 to +150 -55 to +150 Units mW C/W C C Note 1: Device mounted on FR-5 board 1.0 x 0.75 x 0.062 in. with recommended minimum pad layout 9/19/2005 Page 1 www.panjit.com MMBFJ309 / MMBFJ310 ELECTRICAL CHARACTERISTICS (TJ = 25C, unless otherwise noted) OFF CHARACTERISTICS Parameter Gate-Source Breakdown Voltage Gate Reverse Current Symbol V(BR)GSS I GSS Conditions I G = -1.0 A, VDS = 0 VGS = -15Vdc VGS = -15Vdc T =125C J VDS = 10Vdc I DS = 1.0nAdc Min -25 -1.0 -2.0 Typical Max -1.0 -1.0 -4.0 -6.5 Units V nA A V V Gate-Source Cutoff Voltage MMBFJ309 MMBFJ310 VGS (off) ON CHARACTERISTICS Parameter Zero Gate Current Drain Current Symbol Conditions VDS = 10Vdc VGS = 0Vdc I G = 1.0 mA, VDS = 0 Min 12 24 Typical Max 30 60 1.0 Units mA mA V MMBFJ309 MMBFJ310 Gate-Source Forward Voltage I DSS VGS(f) SMALL-SIGNAL CHARACTERISTICS Parameter Forward Transfer Admittance Output Admittance Input Capacitance Reverse Transfer Capacitance Equivalent Short-Circuit Input Noise Voltage Symbol Yfs y os C iss C rss Conditions I D = 10 mA, VDS = 10 V f = 1.0 kHz I D = 10 mA, VDS = 10 V f = 1.0 kHz V GS = -10V, VDS = 0V f = 1.0 MHz V GS = -10V, VDS = 0V f = 1.0 MHz I D = 10 mA, VDS = 10 V f = 100 Hz Min 8.0 - Typical 10 Max 18 250 5.0 2.5 - Units mmhos mhos pF pF en nV / Hz 9/19/2005 Page 2 www.panjit.com MMBFJ309 / MMBFJ310 PACKAGE DIMENSIONS AND SUGGESTED PAD LAYOUT 9/19/2005 Page 3 www.panjit.com |
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